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Swansea University have made a significant breakthrough in semiconductor research by establishing the first four inch thin film gallium oxide capability in the º£½ÇÊÓƵ.

This is a type of next generation semiconductor material that can more efficiently support the high voltages, power densities, and frequencies required for applications in electric vehicles, renewable energy sources, and 5G communications.

The breakdown, has come via its Centre for Integrated Semiconductor Materials (CISM). The eignificant milestone is key to the development of more efficient, compact, and cost-effective electronic devices, and also demonstrates the increasing semiconductor manufacturing and innovation capabilities of the South Wales advanced semiconductor cluster CSconnected with globally leading semiconductor manufacturing companies such as Vishay, KLA, Microchip and IQE.

The achievement comes after a recent £250m investment by US firm Vishay Intertechnlogy, supported by the º£½ÇÊÓƵ Government’s Automotive Transformation Fund, at its Newport plant which will dramatically expand advanced wide band gap power semiconductor component manufacturing. Over the next few years Vishay plans to take investment at its Newport facility to £1bn and create hundreds of high-skilled jobs.

The advancement achieved at Swansea University was througha newly commissioned AIXTRON close-coupled showerhead deposition system, that can precisely produce or ‘grow’ high-quality crystalline thin film gallium oxide on four inch substrates, known as wafers.

The capability is housed in the new Oxide and Chalcogenide Metalorganic Chemical Vapor Deposition (MOCVD) Laboratory at CISM, which is now set to become a national hub for thin film gallium oxide research.

Professor John Heffernan of the National Epitaxy Facility, which supports semiconductor research in º£½ÇÊÓƵ universities, said:“Swansea University’s MOCVD capability is now accessible to researchers through direct collaboration. Researchers can also gain access to feasibility studies through Swansea partnering with the º£½ÇÊÓƵ National Epitaxy Facility’s pump priming scheme. This initiative ensures that academic and industrial partners can leverage Swansea’s expertise in epitaxial thin film growth to accelerate their research and technology development.’

Dr Dan Lamb, research lead at the Oxide and Chalcogenide MOCVD Centre at Swansea University said: "This new facility represents a major step forward for our research, and I’m incredibly excited about the possibilities it unlocks for novel materials and device development. With this advanced equipment, we can push the boundaries of our existing work while also creating new opportunities for collaboration with research groups across the º£½ÇÊÓƵ and beyond.”